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Nanorod‐form ZnO‐homojunction ultraviolet light‐emitting diodes
Author(s) -
Ling B.,
Sun Xiao Wei
Publication year - 2011
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid19.12.913
Subject(s) - homojunction , nanorod , materials science , optoelectronics , ultraviolet , diode , doping , dopant , light emitting diode , annealing (glass) , phosphor , dopant activation , ultraviolet light , nanotechnology , composite material
— Ultraviolet (UV) light‐emitting diodes based on ZnO‐homojunction nanorods is reported. p ‐type doping can be obtained from intrinsic (or close to) ZnO by introducing acceptors, such as P or As, using ion implantation followed by appropriate thermal annealing and dopant activation. Our approach provides a possible solution to p ‐type doping of ZnO and ZnO‐homojunction light‐emitting diodes. It is interesting to note that this solution is offered in the form of nanorods.