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Design of a low‐power‐consumption a‐IGZO TFT‐based V com driver circuit with long‐term reliability
Author(s) -
Jeong Hoon,
Mativenga Mallory,
Lee Sang Gul,
Ha Yong Min,
Jang Jin
Publication year - 2011
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid19.11.825
Subject(s) - thin film transistor , power consumption , reliability (semiconductor) , optoelectronics , materials science , transistor , driver circuit , computer science , electrical engineering , frame (networking) , amorphous solid , power (physics) , voltage , physics , telecommunications , engineering , nanotechnology , chemistry , organic chemistry , quantum mechanics , layer (electronics)
— An amorphous‐InGaZnO (a‐IGZO) thin‐film transistor (TFT)‐based V com driver circuit that has long‐term reliability and can be integrated with the pixel array on a panel has been designed. Owing to the V com inversion, the power consumed by the proposed driving scheme is 40% less than that consumed by the conventional line‐inversion method. The high mobility (>10 cm 2 /V‐sec) of the a‐IGZO TFTs allows the integration of devices with small channel widths (<750 μm) and thus keeps the overall device size small, which is important for displays with narrow bezels. The lifetime of the V com driver is improved by AC driving (by clocking the n ‐th and ( n + 1)‐th frame with 20 and 0 V, respectively) of the buffer TFTs.