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Active‐matrix organic light‐emitting diode using inverse‐staggered poly‐Si TFTs with a center‐offset gated structure
Author(s) -
Kang Dong Han,
Park Mi Kyung,
Jang Jin,
Chang Young Jin,
Oh Jae Hwan,
Choi Jae Beom,
Kim Chi Woo
Publication year - 2010
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid18.2.122
Subject(s) - active matrix , materials science , thin film transistor , oled , optoelectronics , backplane , offset (computer science) , amoled , diode , amorphous silicon , transistor , polycrystalline silicon , silicon , electrical engineering , crystalline silicon , computer science , nanotechnology , voltage , programming language , engineering , layer (electronics)
— A low‐cost active‐matrix backplane using non‐laser polycrystalline silicon (poly‐Si) having inverse‐staggered TFTs with amorphous‐silicon (a‐Si) n + contacts has been developed. The thin‐film transistors (TFTs) have a center‐offset gated structure to reduce the leakage current without scarifying the ON‐currents. The leakage current of the center‐offset TFTs at Vg = −10 V is two orders of magnitude lower than those of the non‐offset TFTs. The center‐offset length of the TFTs was 3 μm for both the switching and driving TFTs. A 2.2‐in. QQVGA (1 60 × 1 20) active‐matrix organic light‐emitting‐diode (AMOLED) display was demonstrated using conventional 2T + 1C pixel circuits.
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