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Discharge properties and chemical stability of SrZrO films
Author(s) -
Fukui Yusuke,
Honda Yosuke,
Yamauchi Yasuhiro,
Okafuji Michiko,
Sakai Masahiro,
Nishitani Mikihiko,
Takata Yusuke
Publication year - 2010
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid18.12.1090
Subject(s) - materials science , sputtering , ion , amorphous solid , carbonation , layer (electronics) , adsorption , analytical chemistry (journal) , thin film , composite material , nanotechnology , chemistry , crystallography , organic chemistry , chromatography
Abstract— MgO thin film is currently used as a surface protective layer for dielectric materials because MgO has a high resistance during ion sputtering and exhibits effective secondary electron emission. The secondary‐electron‐emission coefficient γ of MgO is high for Ne ions; however, it is low for Xe ions. The Xe content of the discharge gas of PDPs needs to be raised in order to increase the luminous efficiency. Thus, the development of high‐γ materials replacing MgO is required. The discharge properties and chemical surface stability of SrO containing Zr (SrZrO) as the candidate high‐γ protective layer for noble PDPs have been characterized. SrZrO films have superior chemical stability, especially the resistance to carbonation because of the existence of a few adsorption sites due to their amorphous structure. The firing voltage is 60 V lower than that of MgO films for a discharge gas of Ne/Xe = 85/15 at 60 kPa.