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Temporary bond—debond technology for high‐performance transistors on flexible substrates
Author(s) -
Haq Jesmin,
Vogt Bryan D.,
Howard Emmett,
Loy Doug
Publication year - 2010
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid18.11.884
Subject(s) - materials science , flexible display , optoelectronics , wafer , fabrication , thin film transistor , flexible electronics , foil method , substrate (aquarium) , transistor , wire bonding , silicon , nanotechnology , voltage , electrical engineering , composite material , chip , medicine , oceanography , alternative medicine , engineering , geology , layer (electronics) , pathology
— A processing technology based upon a temporary bond—debond approach has been developed that enables direct fabrication of high‐performance electronic devices on flexible substrates. This technique facilitates processing of flexible plastic and metal‐foil substrates through automated standard semiconductor and flat‐panel tool sets without tool modification. The key to processing with these tool sets is rigidifying the flexible substrates through temporary bonding to carriers that can be handled in a similar manner as silicon wafers or glass substrates in conventional electronics manufacturing. To demonstrate the power of this processing technology, amorphous‐silicon thin‐film‐transistor (a‐Si:H TFT) backplanes designed for electrophoretic displays (EPDs) were fabricated using a low‐temperature process (180°C) on bonded‐plastic and metal‐foil substrates. The electrical characteristics of the TFTs fabricated on flexible substrates are found to be consistent with those processed with identical conditions on rigid silicon wafers. These TFTs on plastic exhibit a field‐effect mobility of 0.77 cm 2 /V‐sec, on/off current ratio >10 9 at Vds = 10 V, sub‐threshold swing of 365 mV/dec, threshold voltage of 0.49 V, and leakage current lower than 2 pA/μm gate width. After full TFT‐array fabrication on the bonded substrate and subsequent debonding, the flexible substrate retains its original flexibility; this enables bending of the EPD display without loss in performance.