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Device reliability under electrical stress and photo response of oxide TFTs
Author(s) -
Park SangHee Ko,
Ryu MinKi,
Yoon SungMin,
Yang Shinhyuk,
Hwang ChiSun,
Jeon JaeHong
Publication year - 2010
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid18.10.779
Subject(s) - reliability (semiconductor) , materials science , passivation , optoelectronics , stress (linguistics) , oxide , semiconductor , computer science , layer (electronics) , composite material , power (physics) , metallurgy , physics , linguistics , philosophy , quantum mechanics
— The stability of oxide TFTs has been the main focus of this research and is probably the most crucial requirement for the successful application to flat‐panel displays. Although the high Fermi level of oxide semiconductors makes TFTs basically stable under electrical stress, the device reliability under diverse variations of electrical stress is affected by materials such as active semiconductors and gate insulators, processes for the formation of back/front channels and passivation layers, and device configurations among other things. How these factors affect the device reliability have been investigated and a review of the stability is presented. In addition, several categories of the light instability of oxide TFTs is presented and the origin is discussed.