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Transfer‐curve assessment of oxide thin‐film transistors
Author(s) -
Wager John F.
Publication year - 2010
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid18.10.749
Subject(s) - thin film transistor , oxide , transistor , computer science , subthreshold swing , electronics , threshold voltage , materials science , oxide thin film transistor , optoelectronics , channel (broadcasting) , subthreshold conduction , component (thermodynamics) , voltage , electrical engineering , nanotechnology , telecommunications , physics , engineering , layer (electronics) , metallurgy , thermodynamics
— Oxide electronics is an emerging area that is well positioned to strongly and positively impact next‐generation display technology. A metal‐oxide thin‐film transistor (TFT) is the fundamental component of oxide electronics. Unfortunately, some of the claims made in the literature about the performance of oxide TFTs are, in this author's opinion, unreliable. This is true of turn‐on voltage, subthreshold swing, and, especially, channel mobility. Measurement artifacts can lead to unreliable performance estimates. The goal of this contribution is to enumerate some of these artifacts and to outline a general testing procedure for avoiding common oxide‐TFT assessment pitfalls.