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Zinc oxide by ALD for thin‐film‐transistor application
Author(s) -
Choi WoonSeop
Publication year - 2009
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid17.9.751
Subject(s) - thin film transistor , materials science , atomic layer deposition , thin film , optoelectronics , transistor , oxide thin film transistor , zinc , layer (electronics) , saturation (graph theory) , oxide , nanotechnology , voltage , electrical engineering , metallurgy , mathematics , engineering , combinatorics
— High‐quality ZnO thin films for transparent thin‐film transistors (TFTs) were successfully prepared by using an injection‐type source delivery system for atomic layer deposition (ALD). By using this delivery system, the source delivery pulse time was dramatically reduced to 0.002 sec to minimize processing time. The growth of ZnO thin film at a relatively low temperature of 150°C shows good characteristics. The process factors on the reactants for film growth were characterized. The bottom‐contact bottom‐gate ZnO TFT shows good electrical properties with solid saturation.