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a‐InGaZnO thin‐film transistors for AMOLEDs: Electrical stability and pixel‐circuit simulation
Author(s) -
Chen Charlene,
Abe Katsumi,
Kumomi Hideya,
Kanicki Jerzy
Publication year - 2009
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid17.6.525
Subject(s) - thin film transistor , amoled , materials science , optoelectronics , subthreshold conduction , threshold voltage , amorphous solid , spice , transistor , subthreshold slope , active matrix , biasing , voltage , electronic engineering , electrical engineering , composite material , crystallography , layer (electronics) , engineering , chemistry
Abstract— Inverted‐staggered amorphous In‐Ga‐Zn‐O (a‐InGaZnO) thin‐film transistors (TFTs) were fabricated and characterized on glass substrates. The a‐InGaZnO TFTs exhibit adequate field‐effect mobilities, sharp subthreshold slopes, and very low off‐currents. The current temperature stress (CTS) on the a‐InGaZnO TFTs was performed, and the effect of stress temperature ( TSTR ), stress current ( ISTR ), and TFT biasing condition on their electrical stability was investigated. Finally, SPICE modelling for a‐InGaZnO TFTs was developed based on experimental data. Several active‐matrix organic light‐emitting‐display (AMOLED) pixel circuits were simulated, and the potential advantages of using a‐InGaZnO TFTs were discussed.