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The effect of gas‐dynamic factors on selective carbon‐nanotube synthesis by injection CVD method for field‐emission cathodes
Author(s) -
Labunov Vladimir A.,
Shulitski Boris G.,
Prudnikava Alena L.,
Shaman Yuri P.,
Basaev Alexander S.
Publication year - 2009
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid17.5.489
Subject(s) - carbon nanotube , field electron emission , materials science , catalysis , hydrocarbon , raman spectroscopy , chemical engineering , cathode , ferrocene , xylene , volumetric flow rate , pyrolysis , nanotechnology , analytical chemistry (journal) , electrode , benzene , electrochemistry , organic chemistry , chemistry , electron , physics , engineering , quantum mechanics , optics
— Reversible selective growth of carbon‐nanotube (CNT) arrays on Si/SiO 2 topologies was investigated for field‐emission‐display applications. The method used was that of high‐temperature pyrolysis of fluid hydrocarbon ( p ‐xylene [C 8 H 10 ]) in a mixture with volatile catalyst (ferrocene [Fe(C 5 H 5 ) 2 ]) using Ar as the gas carrier. The synthesized CNT arrays were analyzed by SEM, TEM, Raman, and TGA analyses. Reversible CNT growth both on Si and SiO 2 surfaces was found to be sensitive to the gas‐carrier flow rate and the catalyst/hydrocarbon solution injection rate into the synthesis zone. This phenomenon can be explained by inverse domination of active sites on Si and SiO 2 surfaces at different flow rates of gas mixture, causing different types of catalyst precipitation followed by subsequent CNT growth. In principle, the possibility of growing CNTs using the proposed technology will allow the creation of precise geometries of field‐emission cathodes excluding the step of catalyst localization.