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Numerical analysis of density of energy states for electron‐emission sources in MgO
Author(s) -
Ho S.,
Nobuki S.,
Uemura N.,
Mori S.,
Miyake T.,
Suzuki K.,
Mikami Y.,
Shiiki M.,
Kubo S.
Publication year - 2009
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid17.12.1059
Subject(s) - exoelectron emission , atomic physics , materials science , electron , doping , energy (signal processing) , gaussian , characteristic energy , electron density , excitation , density of states , physics , condensed matter physics , nuclear physics , optoelectronics , quantum mechanics
— An analytical method to determine the density of energy states of electron‐emission sources (EESs) in chemical‐doped MgO is described using a discharge probability model and a thermal excitation and emission model. The density of energy states for multiple types of EESs is represented by using a linear combination of Gaussian functions of which parameters are determined by the theoretical emission time constant of an exoelectron and statistical delay time ts extracted from experimental stochastic distributions of discharge delay time in plasma‐display panels. When applied to Si‐doped MgO, the effective number of Si EES is calculated to be 1.8 × 10 6 per cell. The average and standard deviations of activation energy have an energy level of 770 meV and a large value of 55 meV. In Si and H co‐doped MgO, the high peak density of [H 2− ] 0 appears at 550 meV. ts at the short time interval of 1 msec decreases and is independent of temperature due to exoelectron emission from the [H 2− ] 0 . The dependence of ts at a time interval of 10 msec on temperature becomes weak because the energy structure of the Si EES broadens significantly attributed to the electrostatic effects of the doped H atoms.