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Luminescent oxide thin films grown by pulsed laser deposition
Author(s) -
Hirata G. A.,
McKittrick J.,
Shea L. E.,
Lopez O. A.,
AvalosBorja M.
Publication year - 1996
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.4731190
Subject(s) - photoluminescence , materials science , thin film , amorphous solid , sapphire , pulsed laser deposition , crystallinity , excimer laser , optoelectronics , fluence , phosphor , luminescence , laser , annealing (glass) , analytical chemistry (journal) , optics , nanotechnology , composite material , chemistry , physics , organic chemistry , chromatography
— Transparent photoluminescent ZnGa 2 O 4 and Tb‐doped Y 3 Al 5 O 12 (YAG:Tb) thin films were deposited on sapphire substrates at 300°C by laser ablation. The targets were made from ZnGa 2 O 4 and YAG:Tb powders prepared with a novel ceramic processing technique (combustion synthesis). The deposition of the films was performed in ultrahigh vacuum with a KrF excimer laser (wavelength = 248 nm) with a fluence of 3.6 J/cm 2 and a repetition rate of 30 Hz. X‐ray diffraction and Auger measurements taken on as‐deposited films indicated that the films were amorphous and showed a reduction in oxygen when compared to the bulk targets, and were not photoluminescent. Post‐annealing treatments in air for at least 1 hour in the range 800–1200°C induced crystallinity and recovered blue photoluminescence on ZnGa 2 O 4 and green photoluminescence on YAG:Tb thin films, respectively.
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