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59.3: Bridged‐grain (BG) Eximer Laser Annealing (ELA) Polycrystalline Silicon Thin Film Transistors (TFTs)
Author(s) -
Zhao Shuyun,
Meng Zhiguo,
Zhou Wei,
Wong Man,
Kwok Hoi Sing
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621473
Subject(s) - thin film transistor , materials science , polycrystalline silicon , annealing (glass) , optoelectronics , threshold voltage , grain boundary , transistor , field effect , voltage , composite material , layer (electronics) , electrical engineering , microstructure , engineering
A new technique bridged‐grain (BG) was introduced. Using this BG eximer laser annealing (ELA) poly‐Si as an active layer, the grain boundary effects can be reduced. Important electrical properties such as sub‐threshold swing, threshold voltage, maximum field effect mobility, leakage current, on‐off ratio and device uniformity across the substrate can all be improved using the present technique. The improvement can be achieved at low cost, thus making inexpensive, high performance LTPS TFT a reality.