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49.4: High‐definition Top‐emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors
Author(s) -
Sugisawa Nozomu,
Sasaki Toshiki,
Ushikubo Takahiro,
Ohsawa Nobuharu,
Seo Satoshi,
Hatano Kaoru,
Nagata Tkaaki,
Fukai Shuji,
Murakawa Tsutomu,
Yoshitomi Shuhei,
Hayakawa Masahiko,
Miyake Hiroyuki,
Koyama Jun,
Yamazaki Shunpei,
Okazaki Kenichi,
Sakakura Masayuki
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621427
Subject(s) - amoled , backplane , materials science , oled , optoelectronics , thin film transistor , anode , transistor , doping , layer (electronics) , semiconductor , diode , nanotechnology , computer science , electrical engineering , active matrix , computer hardware , voltage , chemistry , engineering , electrode
Abstract We have developed a highly efficient top‐emitting white OLED by employing a stable reflective anode structure and a p‐doped buffer layer. Furthermore, combining the white OLED with color filters, we succeeded in fabricating a prototype of a high‐definition AMOLED display having highly reliable OS‐FETs as the backplane.