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49.3: Oxide TFT Scan Driver with Dynamic Threshold Voltage Control
Author(s) -
Park YongSung,
Chung BoYong,
Kang ChulKyu,
Park SeoungIl,
Im KiJu,
Jeong Jong Han,
Kim ByungHee,
Kim Sang Soo
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621426
Subject(s) - threshold voltage , amoled , thin film transistor , voltage , materials science , leakage (economics) , electrical engineering , computer science , optoelectronics , electronic engineering , transistor , engineering , nanotechnology , active matrix , layer (electronics) , economics , macroeconomics
Oxide TFTs have a negative threshold voltage (V th ), which can become even more negative in response to DC or AC stress. Therefore, these voltage stresses can cause severe leakage current in a scan driver. In this paper, a scan driver with dynamic threshold voltage control (DTVC) is proposed to minimize the leakage current and enlarge operating margin. Effectiveness of DTVC was verified with a 14‐inch AMOLED.