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38.5L: Late‐News Paper : PVD SiO 2 for Metal‐Oxide TFT Application
Author(s) -
Graw Oliver,
Scheer Evelyn,
Hellmich Anke,
Bender Marcus
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621377
Subject(s) - thin film transistor , materials science , dielectric , optoelectronics , oxide , sputtering , thin film , hydrogen , metal , leakage (economics) , nanotechnology , metallurgy , chemistry , organic chemistry , layer (electronics) , economics , macroeconomics
IGZO TFTs are promising candidates to drive future high performance AM LCDs. Since IGZO is known to be sensitive to hydrogen new deposition processes for the adjacent dielectric thin films are needed. We developed a full‐reactive hydrogen‐free sputter process for SiO 2 which shows a performance comparable to the state‐of‐art CVD dielectrics. We demonstrated that our sputtered SiO 2 thin films are stable to electric fields of above 10 MV/cm and show leakage currents below 10 −8 A/cm 2 at 6 MV/cm.