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35.4L: Late‐News Paper : Metal‐Oxide Thin Film Transistor with High Performance and Good Operation Stability
Author(s) -
Yu Gang,
Shieh ChanLong,
Foong Fatt,
Wang Guangming,
Kuo Aaron,
Yang Kaixia,
Wang Jian,
Chang Frankie,
Peng James,
Nilsson Boo
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621361
Subject(s) - thin film transistor , materials science , transistor , optoelectronics , design for manufacturability , oxide thin film transistor , oled , oxide , electrical engineering , nanotechnology , engineering , voltage , metallurgy , layer (electronics)
Non‐InGaZnO based metal‐oxide TFT is developed with high performance and good stability. Manufacturability was demonstrated with a high capacity, Gen‐2.5 size, color‐filter production line. Superb TFT performance was achieved with μ>80 cm 2 /Vsec, I on /I off > 10 10 and S<0.2 V/dec. This TFT shows high stability under OLED and LCD operation conditions. A 4.8″ bottom emission AMOLED is demonstrated with aperture ratio larger than 50%. Power efficiency >6 lm/Watt at >500 nits was achieved with high display uniformity. The average power efficiency under video operation is beyond 20 lm/Watt.