35.4L:  Late‐News Paper : Metal‐Oxide Thin Film Transistor with High Performance and Good Operation Stability | Zendy

Yu Gang | Zendy; Shieh ChanLong | Zendy; Foong Fatt | Zendy; Wang Guangming | Zendy; Kuo Aaron | Zendy; Yang Kaixia | Zendy; Wang Jian | Zendy; Chang Frankie | Zendy; Peng James | Zendy; Nilsson Boo | Zendy

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35.4L: Late‐News Paper : Metal‐Oxide Thin Film Transistor with High Performance and Good Operation Stability

Author(s) -

Yu Gang,

Shieh ChanLong,

Foong Fatt,

Wang Guangming,

Kuo Aaron,

Yang Kaixia,

Wang Jian,

Chang Frankie,

Peng James,

Nilsson Boo

Publication year - 2011

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3621361

Subject(s) - thin film transistor , materials science , transistor , optoelectronics , design for manufacturability , oxide thin film transistor , oled , oxide , electrical engineering , nanotechnology , engineering , voltage , metallurgy , layer (electronics)

Non‐InGaZnO based metal‐oxide TFT is developed with high performance and good stability. Manufacturability was demonstrated with a high capacity, Gen‐2.5 size, color‐filter production line. Superb TFT performance was achieved with μ>80 cm 2 /Vsec, I on /I off > 10 10 and S<0.2 V/dec. This TFT shows high stability under OLED and LCD operation conditions. A 4.8″ bottom emission AMOLED is demonstrated with aperture ratio larger than 50%. Power efficiency >6 lm/Watt at >500 nits was achieved with high display uniformity. The average power efficiency under video operation is beyond 20 lm/Watt.

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