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35.2: High‐Performance Solution‐Processed Oxide TFT with Dual Channel at Low Temperature
Author(s) -
Jeong Woong Hee,
Kim Kyung Min,
Kim Dong Lim,
Rim YouSeung,
Kim Hyun Jae,
Park KyungBae,
Ryu MyungKwan
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621359
Subject(s) - thin film transistor , materials science , optoelectronics , conductance , oxide , channel (broadcasting) , saturation (graph theory) , transistor , electrical resistivity and conductivity , threshold voltage , conductivity , voltage , electrical engineering , layer (electronics) , nanotechnology , chemistry , metallurgy , condensed matter physics , mathematics , engineering , combinatorics , physics
In this study, we investigated solution‐processed oxide thin film transistors (TFTs) with dual channel (DC) at 350°C. The DC TFTs consisted of thin InZnO (IZO) channel and thick AlInZnO (AIZO) channel. The IZO could provide high carrier concentration to enhance the charge transport for high saturation mobility (μ sat ) and thick AIZO channel could also regulate the conductance for proper threshold voltage (V th ). The resistivity of front IZO thin films could be determined by composition ratio of In/Zn and thickness of IZO channel. Thus, we can demonstrate excellent device with μ sat of 5.02 cm 2 /Vs, V th of 0.35 V, and on/off ratio of over 10 6 at 350°C.