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26.3 Design of a Low Power Consumption a‐IGZO TFT‐based Vcom Driver Circuit with Long‐Term Reliability
Author(s) -
Jeong Hoon,
Mativenga Mallory,
Jang Jin,
Lee Sang Gul,
Ha Yong Min
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621315
Subject(s) - thin film transistor , power consumption , reliability (semiconductor) , driver circuit , gate driver , materials science , power (physics) , frame (networking) , electrical engineering , optoelectronics , computer science , electronic engineering , engineering , voltage , telecommunications , physics , nanotechnology , layer (electronics) , quantum mechanics
We have designed an integrated a‐IGZO TFT‐based Vcom driver circuit with low power consumption, narrow bezel and long‐term reliability on a glass substrate. The proposed driving scheme can achieve 40% lower power consumption than the conventional driving scheme, owing to Vcom inversion. The higher mobility (> 10 cm 2 / V.s) of the a‐IGZO TFTs compared to a‐Si:H TFTs allows the integration of smaller size devices in the gate driver circuitry, leading to displays with narrower bezels. AC driving of the buffer TFTs by clocking the n th and (n+1) th frame with 20 and 0 V, respectively, improves the lifetime of the Vcom driver circuit.