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22.3: Flexible Top‐gate Amorphous InGaZnO TFTs Array for AMOLED Applications
Author(s) -
Yeh YungHui,
Cheng ChunCheng,
Lin ChangYu,
Ho GengTai,
Yu MingJiue,
Lai Benjamin ChihMing,
Leu ChyiMing
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621297
Subject(s) - amoled , materials science , polyimide , optoelectronics , amorphous solid , substrate (aquarium) , thin film transistor , transmittance , nanotechnology , layer (electronics) , chemistry , crystallography , oceanography , geology , active matrix
Flexible top‐gate amorphous InGaZnO TFTs array on a colorless polyimide substrate for AMOLED applications was successfully fabricated at 200 °C for the first time. The light transmittance of polyimide substrate is 90%. The maximum field‐effect mobility is 10.6 cm 2 /V‐s, subthreshold swing is 0.3 V/decade, and the on/off current ratio is 10 8 .