22.3: Flexible Top‐gate Amorphous InGaZnO TFTs Array for AMOLED Applications | Zendy

Yeh YungHui | Zendy; Cheng ChunCheng | Zendy; Lin ChangYu | Zendy; Ho GengTai | Zendy; Yu MingJiue | Zendy; Lai Benjamin ChihMing | Zendy; Leu ChyiMing | Zendy

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22.3: Flexible Top‐gate Amorphous InGaZnO TFTs Array for AMOLED Applications

Author(s) -

Yeh YungHui,

Cheng ChunCheng,

Lin ChangYu,

Ho GengTai,

Yu MingJiue,

Lai Benjamin ChihMing,

Leu ChyiMing

Publication year - 2011

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3621297

Subject(s) - amoled , materials science , polyimide , optoelectronics , amorphous solid , substrate (aquarium) , thin film transistor , transmittance , nanotechnology , layer (electronics) , chemistry , crystallography , oceanography , geology , active matrix

Flexible top‐gate amorphous InGaZnO TFTs array on a colorless polyimide substrate for AMOLED applications was successfully fabricated at 200 °C for the first time. The light transmittance of polyimide substrate is 90%. The maximum field‐effect mobility is 10.6 cm 2 /V‐s, subthreshold swing is 0.3 V/decade, and the on/off current ratio is 10 8 .

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