4.2: Integrated Scan Driver with Oxide TFTs Using Floating Gate Method | Zendy

Kang ChulKyu | Zendy; Park YongSung | Zendy; Park SeongIl | Zendy; Mo YeonGon | Zendy; Kim ByungHee | Zendy; Kim Sang Soo | Zendy

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4.2: Integrated Scan Driver with Oxide TFTs Using Floating Gate Method

Author(s) -

Kang ChulKyu,

Park YongSung,

Park SeongIl,

Mo YeonGon,

Kim ByungHee,

Kim Sang Soo

Publication year - 2011

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3621289

Subject(s) - thin film transistor , materials science , amoled , capacitor , transistor , ripple , voltage , electrical engineering , threshold voltage , oxide , optoelectronics , electronic engineering , engineering , layer (electronics) , nanotechnology , active matrix , metallurgy

An on‐glass integrated scan driver is proposed for oxide thin film transistors TFTs with negative threshold voltage. A coupling capacitor and a TFT for setting the initial voltage to the gate of a TFT were added to minimize the off‐state current. Simulated and measured results indicate that the proposed scan driver shows no ripple and fast rise time/fall time of scan outputs. Circuit operation was verified with a 14‐inch AMOLED panel.

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