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4.2: Integrated Scan Driver with Oxide TFTs Using Floating Gate Method
Author(s) -
Kang ChulKyu,
Park YongSung,
Park SeongIl,
Mo YeonGon,
Kim ByungHee,
Kim Sang Soo
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621289
Subject(s) - thin film transistor , materials science , amoled , capacitor , transistor , ripple , voltage , electrical engineering , threshold voltage , oxide , optoelectronics , electronic engineering , engineering , layer (electronics) , nanotechnology , active matrix , metallurgy
An on‐glass integrated scan driver is proposed for oxide thin film transistors TFTs with negative threshold voltage. A coupling capacitor and a TFT for setting the initial voltage to the gate of a TFT were added to minimize the off‐state current. Simulated and measured results indicate that the proposed scan driver shows no ripple and fast rise time/fall time of scan outputs. Circuit operation was verified with a 14‐inch AMOLED panel.