Premium
P‐182: Lifetime Enhancement by Fabrication of a Doped Graded‐emission Layer in Organic Light‐emitting Diodes
Author(s) -
Chuang ChunShiung,
Cheng ChiaLiang,
Chen Hsian,
Chen Chin H.
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621239
Subject(s) - common emitter , materials science , oled , optoelectronics , doping , fabrication , diode , layer (electronics) , nanotechnology , medicine , alternative medicine , pathology
Abstract We report an improved doped graded‐emission layered structure (IG‐EML) which can be readily fabricated by a conventional research thermal‐evaporation coater and enhance device lifetime. This is demonstrated by doping fluorescent yellow emitter EY53 in the host matrix formed by programmed continuous mixing of a typical hole transporting material (e.g. NPB) and an electron transporting material (e.g. BAlq). Compared with the conventional bi‐layer (B‐EML) , mixed‐emission (M‐EML) and a typical graded‐emission (G‐EML) device, the novel IG‐EML doped OLEDs offer significant advantage in operational device stability T 50 (more than 4.8 times than that of the B‐EML structure) without compromising its current efficiency.