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P‐167: Characteristics of Polymer Light Emitting Diode with Solution Processed Graphene Oxide Layer
Author(s) -
Youn Jun Ho,
Lee Yeon Il,
Moon Hie Tae,
Baek Su Jin,
Jang Jin
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621223
Subject(s) - pedot:pss , graphene , materials science , layer (electronics) , optoelectronics , oxide , diode , polymer , voltage , nanotechnology , composite material , electrical engineering , metallurgy , engineering
We used the graphene oxide (GO) as the hole transport layer (HTL) in polymer light emitting diode (PLED). Driving voltage and current efficiency of device with GO layer are 7.2 V and 5.2 cd/A, respectively. And those of device with PEDOT:PSS HIL are 6.1 V and 7.5cd/A, respectively. The driving voltage and efficiency of PLED with GO layer are much better than those without HIL. Because of its inorganic and neutrality unlike PEDOT:PSS, the PLED using a GO layer can be more stable compared to conventional PLED with PEDOT:PSS.