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P‐109: Sol‐Gel Alumina Dielectric for Low‐Voltage Operating Pentacene Transistor
Author(s) -
Han Keonkook,
Lee Jonghwan
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621147
Subject(s) - pentacene , materials science , transistor , hysteresis , dielectric , optoelectronics , gate dielectric , thin film transistor , voltage , threshold voltage , aluminum oxide , aluminium , electrical engineering , nanotechnology , composite material , condensed matter physics , layer (electronics) , physics , engineering
We present a sol‐gel based aluminum oxide dielectric for organic transistors. The pentacene transistor fabricated with the dielectric permits low voltage operation, exhibits no hysteresis, and is stable when subjected to bias stress. The off‐state current is stable and it is not sensitive to the off‐state voltage.