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P‐56: Design of Gate Integrated Circuit Using IGZO Thin Film Transistors for TFT‐LCD Panel
Author(s) -
Jeon Sangjin,
Ko Gwangbum,
Chang Jongwoong,
Hwang Samjin,
Myoung Jaemin
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621078
Subject(s) - thin film transistor , inverter , electrical engineering , transistor , materials science , signal (programming language) , gate driver , electronic engineering , engineering , computer science , voltage , layer (electronics) , composite material , programming language
Abstract This thesis deals with the method to improve the gate driver stability of large sized IGZO TFT panel. The proposed Gate driver circuit was designed for 26‐inch HD LCD Panel and the circuit has been designed considering the electrical characteristic of instability under the bias stress and temperature This circuit consists of twenty TFT using two clock signals such as CK1,CK2 (V on ) and 1 power signals such as VSS (V off ), and new circuit with double inverter suppress the ripple occurrence for every time except actuating time that the signal of the gate line is revealed. By applying the proposed new circuit, the H‐SPICE simulation was performed. TFT in integrated circuit can be stable in the low frequency drive (48 Hz) althought ΔV th was 29 V and It could be applicable to the threshold frequency of 86 Hz in the high frequency operation without a problem.