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P‐202L: Late‐News Poster : Density‐of‐States Based Analysis on the Effect of Active Thin‐film Thickness on Current Stress‐induced Instability in Amorphous InGaZnO AMOLED Driver TFTs
Author(s) -
Kong Dongsik,
Jung Hyungkwang,
Kim Yongsik,
Bae Minkyung,
Jeon Yong Woo,
Kim Sungchul,
Jang Jaemam,
Kim Jaehyeong,
Kim Woojoon,
Hur Inseok,
Kim Dong Myong,
Kim Dae Hwan,
Ahn Byung,
Park Sei Yong,
Park JunHyun,
Kim Joo Han,
Park Jaewoo,
Lee JeHun
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621052
Subject(s) - thin film transistor , amoled , materials science , amorphous solid , active layer , optoelectronics , threshold voltage , trapping , layer (electronics) , stress (linguistics) , electric field , voltage , transistor , composite material , electrical engineering , crystallography , chemistry , physics , active matrix , ecology , linguistics , philosophy , quantum mechanics , biology , engineering
The effect of the active layer thickness (T IGZO ) on the constant current stress (CCS)‐induced threshold voltage shift (ΔV T ) in amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs) for AMOLED drivers is investigated by using a subgap density‐of‐states (DOS) model and simulation. The CCS‐induced positive ΔV T in a‐IGZO TFT with a thicker T IGZO is larger than that in a‐IGZO TFTs with a thinner T IGO . It is originated from more activated charge trapping (60∼80 % in total ΔV T ) and DOS creation due to a higher surface electric field with a thicker T IGZO . Our results show that using thinner active layer in a‐IGZO TFTs is desirable for high performance and highly stable AMOLEDs if the quality of thin‐film bulk is guranteed irrespective of T IGZO .