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P‐35: The Effects of NiSi 2 Seed Control on SGS Crystallization and TFT Characteristics
Author(s) -
Chung Yun Mo,
Lee KiYong,
Seo Jinwook,
Chung Minjae,
Park Byoung Keon,
Lee Donghyun,
Kim Hye Dong,
Kim Sang Soo
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621050
Subject(s) - materials science , crystallization , thin film transistor , crystallinity , amoled , optoelectronics , brightness , composite material , optics , chemical engineering , physics , engineering , layer (electronics) , active matrix
To improve TFT characteristics and reduce leakage current, we have investigated the precise control of NiSi 2 seed shapes in a process called super grain silicon (SGS) crystallization. Excessive leakage current was reduced by the control of Ni in Si below ∼10 13 atoms/cm 2 . Relatively higher SGS crystallinity of about 94% was obtained by inducing (111) NiSi 2 seed to form a disc shape rather than that from a pyramid shaped seed with about 92%, resulting in more uniform TFT characteristics. Based on this seed control method, we fabricated a 14″ AMOLED TV having a pixel‐to‐pixel brightness uniformity of about 92%, which we believe is suitable for product acceptance.