P‐35: The Effects of NiSi 2  Seed Control on SGS Crystallization and TFT Characteristics | Zendy

Chung Yun Mo | Zendy; Lee KiYong | Zendy; Seo Jinwook | Zendy; Chung Minjae | Zendy; Park Byoung Keon | Zendy; Lee Donghyun | Zendy; Kim Hye Dong | Zendy; Kim Sang Soo | Zendy

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P‐35: The Effects of NiSi 2 Seed Control on SGS Crystallization and TFT Characteristics

Author(s) -

Chung Yun Mo,

Lee KiYong,

Seo Jinwook,

Chung Minjae,

Park Byoung Keon,

Lee Donghyun,

Kim Hye Dong,

Kim Sang Soo

Publication year - 2011

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3621050

Subject(s) - materials science , crystallization , thin film transistor , crystallinity , amoled , optoelectronics , brightness , composite material , optics , chemical engineering , physics , engineering , layer (electronics) , active matrix

To improve TFT characteristics and reduce leakage current, we have investigated the precise control of NiSi 2 seed shapes in a process called super grain silicon (SGS) crystallization. Excessive leakage current was reduced by the control of Ni in Si below ∼10 13 atoms/cm 2 . Relatively higher SGS crystallinity of about 94% was obtained by inducing (111) NiSi 2 seed to form a disc shape rather than that from a pyramid shaped seed with about 92%, resulting in more uniform TFT characteristics. Based on this seed control method, we fabricated a 14″ AMOLED TV having a pixel‐to‐pixel brightness uniformity of about 92%, which we believe is suitable for product acceptance.

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