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P‐32: Improving Reliability of IGZO TFTs via the Front‐channel and Back‐channel Protecting Layers Method
Author(s) -
Chen ChungTao,
Chen ShinShueh,
Lin WuHsiung,
Chen PoHsueh
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621047
Subject(s) - materials science , channel (broadcasting) , optoelectronics , front (military) , thin film transistor , reliability (semiconductor) , layer (electronics) , stress (linguistics) , composite material , electrical engineering , engineering , power (physics) , mechanical engineering , physics , quantum mechanics , linguistics , philosophy
The front‐channel protecting layer has been reported to improve GI/IGZO interface and result in undamaged GI surface in coplanar bottom gate IGZO TFTs, and the proposed TFT structures with additional front and back channel protecting showed an effective improvement of Vth shift under both positive and negative gate‐bias stress. The mechanism of Vth shift under the stress has also been studied by this structure. Both front and back channel surfaces are significant. Damage and contamination of these surfaces lead to an increase of Vth instability.