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P‐28: The Effect of AC Bias Frequency on Threshold Voltage Shift of the Amorphous Oxide TFTs
Author(s) -
Kim SunJae,
Lee YoungWook,
Lee SooYeon,
Woo JongSuk,
Kwon JangYeon,
Han MinKoo,
Lee WooGeun,
Yoon KapSoo
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621043
Subject(s) - thin film transistor , materials science , threshold voltage , amorphous solid , stress (linguistics) , biasing , oxide , instability , optoelectronics , condensed matter physics , transistor , voltage , electrical engineering , chemistry , nanotechnology , physics , crystallography , metallurgy , layer (electronics) , linguistics , philosophy , engineering , mechanics
We investigated AC bias stress instability of indium‐gallium‐zinc‐oxide (IGZO) Thin‐film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a‐Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.