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P‐18: Integration of Surface State and Geometry Effects on High Performance Amorphous IGZO Thin‐Film Transistors
Author(s) -
Liu LiWei,
Tsai YunChu,
Liu PoTsun,
Shieh HanPing D.
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621032
Subject(s) - thin film transistor , materials science , amorphous solid , swing , surface (topology) , optoelectronics , subthreshold swing , state (computer science) , transistor , geometry , crystallography , nanotechnology , electrical engineering , computer science , threshold voltage , chemistry , engineering , mechanical engineering , mathematics , algorithm , layer (electronics) , voltage
The influence of surface state effects of a‐IGZO TFTs is investigated and modeled by adopting two different structures. The inverted‐staggered TFTs with the less surface state effects show both improved sub‐threshold swing and stable performances compared to inverted‐coplanar TFTs. Based on our result, the inverted‐staggered structure is suitable as high‐performance a‐IGZO TFTs.