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P‐16: Light‐Bias Induced Instability and Persistent Photoconductivity in In‐Zn‐O/Ga‐In‐Zn‐O Thin Film Transistors
Author(s) -
Ghaffarzadeh Khashayar,
Lee Sungsik,
Nathan Arokia,
Robertson John,
Jeon Sanghun,
Kim Sangwook,
Kim Changjung,
Chung UIn,
Lee JeHun
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621030
Subject(s) - photoconductivity , materials science , optoelectronics , threshold voltage , transistor , thin film transistor , polarity (international relations) , doping , thin film , biasing , voltage , chemistry , nanotechnology , electrical engineering , layer (electronics) , cell , engineering , biochemistry
Abstract Stress/recovery measurements demonstrate that even high‐performance passivated In‐Zn‐O/ Ga‐In‐Zn‐O thin film transistors with excellent in‐dark stability suffer from light‐bias induced threshold voltage shift (ΔV T ) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n‐doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias.