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P‐15: Bias Stress Reliability for w/ and w/o Oxide‐passivated IGZO TFTs
Author(s) -
Tu ChunHao,
Lin WeiTing,
Chen ChiaHsiang,
Hung MingChin,
Chang JiunJye,
Chiang MingFeng,
Liao Weilung
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621028
Subject(s) - passivation , materials science , reliability (semiconductor) , stress (linguistics) , optoelectronics , oxide , layer (electronics) , nanotechnology , metallurgy , physics , power (physics) , linguistics , philosophy , quantum mechanics
The behaviors of dynamic gate bias stress for Indium‐Gallium‐Zinc‐Oxide (IGZO) TFTs were investigated in this study. The device after storage represents a parasitic traneffect after positive gate bias stress. Furthermore, the stability of IGZO TFTs can be improved by adding passivation layer.