P‐15: Bias Stress Reliability for w/ and w/o Oxide‐passivated IGZO TFTs | Zendy

Tu ChunHao | Zendy; Lin WeiTing | Zendy; Chen ChiaHsiang | Zendy; Hung MingChin | Zendy; Chang JiunJye | Zendy; Chiang MingFeng | Zendy; Liao Weilung | Zendy

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P‐15: Bias Stress Reliability for w/ and w/o Oxide‐passivated IGZO TFTs

Author(s) -

Tu ChunHao,

Lin WeiTing,

Chen ChiaHsiang,

Hung MingChin,

Chang JiunJye,

Chiang MingFeng,

Liao Weilung

Publication year - 2011

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3621028

Subject(s) - passivation , materials science , reliability (semiconductor) , stress (linguistics) , optoelectronics , oxide , layer (electronics) , nanotechnology , metallurgy , physics , power (physics) , linguistics , philosophy , quantum mechanics

The behaviors of dynamic gate bias stress for Indium‐Gallium‐Zinc‐Oxide (IGZO) TFTs were investigated in this study. The device after storage represents a parasitic traneffect after positive gate bias stress. Furthermore, the stability of IGZO TFTs can be improved by adding passivation layer.

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