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P‐14: High Performance Solution‐Processed IGZO TFTs Formed by Using a High‐Pressure Annealing Method
Author(s) -
Rim You Seung,
Kim Dong Lim,
Jeong Woong Hee,
Shin Hyun Soo,
Kim Hyun Jae
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621026
Subject(s) - thin film transistor , materials science , annealing (glass) , optoelectronics , subthreshold swing , threshold voltage , subthreshold slope , transistor , voltage , electrical engineering , metallurgy , nanotechnology , layer (electronics) , engineering
We have developed a noble high‐pressure annealing (HPA) method for solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs). As the pressure increased, the electrical properties of solution‐processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal‐organic bonding and the density decrease of interface defect states between IGZO channel and SiO 2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300 °C, its channel mobility (μFE FE ), threshold voltage (V th ), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm 2 /Vs, 2.47 V, 0.48 V/dec. and 7.5×10 6 , respectively.