P‐13: A Full‐Swing a‐IGZO TFT‐Based Inverter with a Top Gate‐Induced Depletion Load | Zendy

Choi Min Hyuk | Zendy; Seok Man Ju | Zendy; Mativenga Mallory | Zendy; Geng Di | Zendy; Kang Dong Han | Zendy; Jang Jin | Zendy

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P‐13: A Full‐Swing a‐IGZO TFT‐Based Inverter with a Top Gate‐Induced Depletion Load

Author(s) -

Choi Min Hyuk,

Seok Man Ju,

Mativenga Mallory,

Geng Di,

Kang Dong Han,

Jang Jin

Publication year - 2011

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3621025

Subject(s) - thin film transistor , inverter , swing , transistor , materials science , optoelectronics , amorphous solid , electrical engineering , noise (video) , voltage , computer science , engineering , chemistry , nanotechnology , layer (electronics) , mechanical engineering , organic chemistry , artificial intelligence , image (mathematics)

A high performance amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT)‐based inverter is demonstrated using the dual gate TFT structure. The results indicate that the load of the inverter behaves like a depletion‐mode TFT when the top gate is under a positive bias. The proposed inverter shows much improved switching characteristics such as a wider swing range and higher noise margins, which are all achieved without the requirement of an additional process step to make the depletion load.

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