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P‐13: A Full‐Swing a‐IGZO TFT‐Based Inverter with a Top Gate‐Induced Depletion Load
Author(s) -
Choi Min Hyuk,
Seok Man Ju,
Mativenga Mallory,
Geng Di,
Kang Dong Han,
Jang Jin
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621025
Subject(s) - thin film transistor , inverter , swing , transistor , materials science , optoelectronics , amorphous solid , electrical engineering , noise (video) , voltage , computer science , engineering , chemistry , nanotechnology , layer (electronics) , mechanical engineering , organic chemistry , artificial intelligence , image (mathematics)
A high performance amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT)‐based inverter is demonstrated using the dual gate TFT structure. The results indicate that the load of the inverter behaves like a depletion‐mode TFT when the top gate is under a positive bias. The proposed inverter shows much improved switching characteristics such as a wider swing range and higher noise margins, which are all achieved without the requirement of an additional process step to make the depletion load.