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P‐12: Novel Positive‐Intrinsic‐Oxide Semiconductor (P‐I‐OS) Photo Sensor for Flat Panel Displays
Author(s) -
Lee WonKyu,
Oh Jae Hwan,
Lee Dong Beom,
Park Yongsung,
Lee Yong Soo,
Chang Young Jin,
Jin Seong Hyun,
Park Sehoon,
Choi Min Hwan,
Choi Jae Beom,
Kim Hye Dong,
Kim Sang Soo
Publication year - 2011
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3621024
Subject(s) - anode , materials science , optoelectronics , cathode , semiconductor , wavelength , electrode , doping , oxide , optics , electrical engineering , physics , engineering , quantum mechanics , metallurgy
Abstract For the first time, photo sensors employing p‐type Si and IGZO semiconductor (P‐I‐OS) have been fabricated with a sensor dimension of W/L = 1600/5. The IGZO layer was deposited using DC sputtering and replaces the conventional n + ‐doped cathode electrode. The P‐I‐OS photo sensor is more sensitive to light with shorter wavelengths, and high to low photo‐current dynamic range is almost constant from −15V to −2.5V of anode bias. The P‐I‐OS photo sensor exhibits dynamic range of 53.3 dB under −5V of anode bias and 10,000 lx of illuminated light intensity