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61.1: Invited Paper : ZnO Thin Film Transistors and Circuits on Flexible Polymeric Substrates by Low‐Temperature PEALD
Author(s) -
Zhao Dalong A.,
Mourey Devin A.,
Fok Ho Him R.,
Li Yuanyuan V.,
Jackson Thomas N.
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3500627
Subject(s) - atomic layer deposition , materials science , polyimide , thin film transistor , optoelectronics , dielectric , transistor , threshold voltage , electronic circuit , layer (electronics) , deposition (geology) , nanotechnology , voltage , electrical engineering , engineering , paleontology , sediment , biology
We report using a novel, weak oxidant, plasma‐enhanced atomic layer deposition (PEALD) process at 200 °C to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates. Weak oxidant PEALD provides a simple, fast deposition process that results in uniform, conformai semiconductor and dielectric layers and enhancement‐mode MOSFETs from uncompensated films. Highly conformai PEALD Al 2 O 3 layers provide a high yield dielectric on rough plastic substrates for both PEALD ZnO TFTs and cross‐overs. Our PEALD ZnO TFTs have field‐effect mobility of >20 cm 2 /V·s on polyimide substrates with excellent bias stress stability. TFTs biased continuously for 40,000s showed <50 mV threshold voltage shift. We also report fast PEALD ZnO circuits on polyimide substrates with propagation delay <20 ns/stage for V DD = 18 V.