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53.3: Redundant Pixel Line Insertion for Laser Crystallization Based Large Size LTPS AMOLED Displays
Author(s) -
Choi Sangmoo,
Kang Chulkyu,
Chung Sungwon,
Kim Moojin,
Kim Muhyun,
Kim Keumnam,
Kim Byunghee
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3500593
Subject(s) - amoled , materials science , brightness , thin film transistor , excimer laser , pixel , optoelectronics , laser , line (geometry) , optics , nanotechnology , physics , mathematics , active matrix , geometry , layer (electronics)
With an excimer laser annealing (ELA) process, maximum display size is limited by the laser beam length because performance variations of the transistors in the overlapped regions cannot be sufficiently compensated to remove the brightness non‐uniformity. In this paper, a redundant pixel line design is proposed to remove overlap mura. A 4.82″ AMOLED was successfully fabricated in order to verify the panel design method.