Premium
45.6: Invited Paper : Photo Sensing Circuits Using Low‐Temperature Polycrystalline Silicon TFTs and Photo Diode for Smart Functional Displays
Author(s) -
Kwon OhKyong,
Lim HanSin
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3500560
Subject(s) - thin film transistor , optoelectronics , materials science , diode , electronic circuit , polycrystalline silicon , silicon , compensation (psychology) , transistor , light emitting diode , optics , electrical engineering , nanotechnology , engineering , physics , psychology , layer (electronics) , voltage , psychoanalysis
Photo sensing circuits using low‐temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) and thin film photo diode such as p‐intrinsic‐n (p‐i‐n) diode and p‐intrinsic‐metal (p‐ i‐m) diode have been studied for several smart functions such as optical touch screen, ambient light sensor, and image scanner. In this paper, aforementioned photo sensing circuits for smart functional displays are reviewed. Also, the driving method for compensation of the temperature characteristic of photo diode is presented.