28.3: ZnO Based n‐n Isotope Heterojunction Light Emitting Diodes by Low Cost Spray Pyrolysis | Zendy

Zhao Junliang | Zendy; Sun Xiaowei | Zendy

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28.3: ZnO Based n‐n Isotope Heterojunction Light Emitting Diodes by Low Cost Spray Pyrolysis

Author(s) -

Zhao Junliang,

Sun Xiaowei

Publication year - 2010

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3500473

Subject(s) - heterojunction , electroluminescence , materials science , optoelectronics , light emitting diode , wafer , photoluminescence , diode , spray pyrolysis , thin film , crystallite , doping , nanotechnology , metallurgy , layer (electronics)

ZnO/Si and ZnO/GaAs based n‐n isotope heterojunction light emitting diodes (LEDs) are reported. Undoped ZnO thin films were deposited on n + ‐Si and n + ‐GaAs wafers by a low cost ultrasonic spray pyrolysis technique. The as‐grown ZnO thin films show polycrystalline structure with good photoluminescence properties. Both ZnO/n + ‐Si and ZnO/n + ‐GaAs LEDs show distinct visible electroluminescence at room temperature when a negative voltage is applied on the ZnO side. The electroluminescence intensity of the ZnO/n + ‐Si(GaAs) heterojunction is higher than the ZnO/p + ‐Si(GaAs)heterojunction.

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