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21.3: Controllable Nano‐Scale Fissure Formation with a Special Conductive Film Structure in Surface‐Conduction Electron‐Emitter Device
Author(s) -
Wu ShengLi,
Zhao LingGuo,
Xiong SiLiang,
Zhang JinTao,
Hu WenBo,
Zhang XiaoNing
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3500438
Subject(s) - common emitter , materials science , electrical conductor , thermal conduction , nano , nanoscopic scale , optoelectronics , electron , conduction electron , fissure , nanotechnology , composite material , physics , quantum mechanics
Abstract The conductive film with a new special structure for surface‐conduction electron‐emitter device is proposed in this paper. with this new conductive film structure, the formation position of the nano‐scale fissure can be controlled easily, and this will help to improve the uniformity of SED. The effectiveness was proved experimentally.