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P‐109: Drain Bias Effect on Characteristics of Reverse Sub‐threshold Region
Author(s) -
Wei ChuanSheng,
Chen Pei Ming,
Chen JimShone,
Huang WeiMing
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3500220
Subject(s) - reverse bias , drain induced barrier lowering , leakage (economics) , materials science , optoelectronics , threshold voltage , biasing , current (fluid) , terminal (telecommunication) , voltage , electrical engineering , computer science , engineering , telecommunications , transistor , diode , economics , macroeconomics
We have investigated device characteristics utilizing top‐gate structure to define the electric characteristics and qualities the value of drain‐source current. At the same time, the device operation for high drain voltage mechanism was also investigated. The new terminal with positively top gate bias can significantly decrease the reverse sub‐threshold leakage current more than one order and keep on 100% Ion improvement for high drain bias operation.