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P‐103: Redistributed Deep States Created by Mechanical Bending to Improve the Electrical Reliability of a‐Si:H TFTs on Flexible Substrates
Author(s) -
Lee M. H.,
Lu S.H.,
Chang S. T.,
Tang M.,
Huang J.J.,
Ho K.Y.,
Huang Y.S.,
Lee C. C.
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3500146
Subject(s) - materials science , backplane , optoelectronics , reliability (semiconductor) , bending , redistribution (election) , stress (linguistics) , composite material , electrical engineering , engineering , power (physics) , linguistics , physics , philosophy , quantum mechanics , politics , political science , law
The disordered bonds of a‐Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a‐Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a‐Si:H TFTs array backplanes.