P‐103: Redistributed Deep States Created by Mechanical Bending to Improve the Electrical Reliability of a‐Si:H TFTs on Flexible Substrates | Zendy

Lee M. H. | Zendy; Lu S.H. | Zendy; Chang S. T. | Zendy; Tang M. | Zendy; Huang J.J. | Zendy; Ho K.Y. | Zendy; Huang Y.S. | Zendy; Lee C. C. | Zendy

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P‐103: Redistributed Deep States Created by Mechanical Bending to Improve the Electrical Reliability of a‐Si:H TFTs on Flexible Substrates

Author(s) -

Lee M. H.,

Lu S.H.,

Chang S. T.,

Tang M.,

Huang J.J.,

Ho K.Y.,

Huang Y.S.,

Lee C. C.

Publication year - 2010

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3500146

Subject(s) - materials science , backplane , optoelectronics , reliability (semiconductor) , bending , redistribution (election) , stress (linguistics) , composite material , electrical engineering , engineering , power (physics) , linguistics , physics , philosophy , quantum mechanics , politics , political science , law

The disordered bonds of a‐Si:H may generate a redistribution of trapped states with strain bending. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a‐Si:H TFTs on flexible substrates. It is possible to produce low cost and highly uniform AMOLED systems for flexible display applications using a‐Si:H TFTs array backplanes.

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