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P‐81: Two Zones Method of Furnace‐Growing Technology to Control Grain Size of In 2 O 3 Film on Gallium Nitride LED
Author(s) -
Lian JanTian,
Tsao KaiChieh,
Su ChunWei,
Chiang ChinI,
Li TzungYang,
Liu ChunShin,
Lin TaiYuan,
Tsou ChienLung
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3500007
Subject(s) - materials science , light emitting diode , optoelectronics , grain size , indium , gallium nitride , quantum efficiency , indium gallium nitride , nitride , oxide , layer (electronics) , gallium , metallurgy , composite material
Surface‐Roughing Method is effective to enhance the efficiency of the light emission of LEDs. We have developed a novel Furnace‐Growing Technology of Surface‐Roughing Method to enhance external quantum efficiency and control the grain size of Indium oxide (In 2 O 3 ) film on the top layer of GaN LEDs. The deposited Film of Indium oxide on GaN LEDs is crystallitic sharps and high uniformity of the thickness.