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P‐64: Using Electroless Plating Technology for Copper Metallization in AMLCD Application
Author(s) -
Liu PoTsun,
Chou YiTeh,
Su ChihYu,
Chen HungMing,
Huang AnDi,
Chen BingMau,
Fuh ChurShyang,
Fan YangShun
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499986
Subject(s) - materials science , copper , copper plating , metallurgy , etching (microfabrication) , plating (geology) , electrode , compatibility (geochemistry) , electroless plating , optoelectronics , nanotechnology , electroplating , composite material , layer (electronics) , chemistry , geophysics , geology
The feasibility of using electro‐less plating (ELP) technology to manufacture copper (Cu) gate electrodes in TFTs is investigated. The poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel‐phosphorus layers. Self‐aligning characteristics also omits the Cu‐etching process. The similar electrical performance verifies the compatibility of this technology.