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P‐60: The Performance Enhancement of the 2ωYAG Laser‐Crystallized Poly‐Si Using a Back‐Side Self‐Heating Layer of a‐Si
Author(s) -
Li Juan,
Ding Siwei,
Yao Ying,
Meng Zhiguo,
Wu Chunya,
Xiong Shaozhen,
Kwok Hoi Sing
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499982
Subject(s) - materials science , crystallization , layer (electronics) , laser , optoelectronics , process window , composite material , optics , chemical engineering , physics , lithography , engineering
Crystallization of a‐Si by doubled frequency YAG laser using a self‐heating layer technology was proposed in this paper. The grain size and the hall mobility of the resulted poly‐Si thin film were enhanced up to almost two times by using the self‐heating layer technology. This technology has a dual heating effect: heat‐retaining and self‐heating with an easier process and wider process window, compared to the conventional capping‐layer technology.

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