P‐206L:  Late‐News Poster : High Performance As‐Deposited Microcrystalline Silicon TFT using High‐Density Microwave Plasma Source | Zendy

Kohno Akihiko | Zendy; Tanaka Kohichi | Zendy; Tanaka Junichi | Zendy; Mizuki Toshio | Zendy; Yamamoto Yoshitaka | Zendy; Tokunaga Kazuhiko | Zendy; Morosawa Narihiro | Zendy; Arai Toshiaki | Zendy; Oka Shinsuke | Zendy; Kitamura Masayuki | Zendy; Ushijima Mitsuru | Zendy

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P‐206L: Late‐News Poster : High Performance As‐Deposited Microcrystalline Silicon TFT using High‐Density Microwave Plasma Source

Author(s) -

Kohno Akihiko,

Tanaka Kohichi,

Tanaka Junichi,

Mizuki Toshio,

Yamamoto Yoshitaka,

Tokunaga Kazuhiko,

Morosawa Narihiro,

Arai Toshiaki,

Oka Shinsuke,

Kitamura Masayuki,

Ushijima Mitsuru

Publication year - 2010

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3499962

Subject(s) - microcrystalline , microcrystalline silicon , thin film transistor , materials science , microwave , optoelectronics , silicon , plasma , deposition (geology) , nanotechnology , computer science , chemistry , amorphous silicon , telecommunications , crystalline silicon , crystallography , physics , paleontology , layer (electronics) , quantum mechanics , sediment , biology

We developed high performance as‐deposited microcrystalline TFT. The microcrystalline silicon was deposited by novel MSEP (Metal Surface microwave Excitation Plasma)‐CVD with high deposition rate of over 20 nm/min and its crystalline ratio was over 70 %. TFT showed high mobility of 1.3 cm 2 /Vs.

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