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P‐206L: Late‐News Poster : High Performance As‐Deposited Microcrystalline Silicon TFT using High‐Density Microwave Plasma Source
Author(s) -
Kohno Akihiko,
Tanaka Kohichi,
Tanaka Junichi,
Mizuki Toshio,
Yamamoto Yoshitaka,
Tokunaga Kazuhiko,
Morosawa Narihiro,
Arai Toshiaki,
Oka Shinsuke,
Kitamura Masayuki,
Ushijima Mitsuru
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499962
Subject(s) - microcrystalline , microcrystalline silicon , thin film transistor , materials science , microwave , optoelectronics , silicon , plasma , deposition (geology) , nanotechnology , computer science , chemistry , amorphous silicon , telecommunications , crystalline silicon , crystallography , physics , paleontology , layer (electronics) , quantum mechanics , sediment , biology
We developed high performance as‐deposited microcrystalline TFT. The microcrystalline silicon was deposited by novel MSEP (Metal Surface microwave Excitation Plasma)‐CVD with high deposition rate of over 20 nm/min and its crystalline ratio was over 70 %. TFT showed high mobility of 1.3 cm 2 /Vs.