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P‐205L: Late‐News Poster : Comparison between a‐InGaZnO and a‐InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film
Author(s) -
Lee Sangwon,
Kim Sungchul,
Jeon Yong Woo,
Kim Dong Myong,
Kima Dae Hwan,
Lee JeHun,
Ahn Byung,
Park Sei Yong,
Park JunHyun,
Kim Joo Han,
Park Jaewoo
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499961
Subject(s) - perspective (graphical) , thin film transistor , acceptor , materials science , stability (learning theory) , optoelectronics , condensed matter physics , physics , nanotechnology , mathematics , computer science , geometry , layer (electronics) , machine learning
The extraction of acceptor‐like subgap DOS (g A (E)) in a‐InGaZnO and a‐InHfZnO TFTs is demonstrated by using multi‐frequency C‐ V technique. The DC performance and negative bias stress (NBS)‐ induced instability are compared in perspective of g A (E). The superior stability of a‐InHfZnO TFT is deduced to be originated from donor‐like DOS g D (E).