P‐205L:  Late‐News Poster : Comparison between a‐InGaZnO and a‐InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film | Zendy

Lee Sangwon | Zendy; Kim Sungchul | Zendy; Jeon Yong Woo | Zendy; Kim Dong Myong | Zendy; Kima Dae Hwan | Zendy; Lee JeHun | Zendy; Ahn Byung | Zendy; Park Sei Yong | Zendy; Park JunHyun | Zendy; Kim Joo Han | Zendy; Park Jaewoo | Zendy

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P‐205L: Late‐News Poster : Comparison between a‐InGaZnO and a‐InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film

Author(s) -

Lee Sangwon,

Kim Sungchul,

Jeon Yong Woo,

Kim Dong Myong,

Kima Dae Hwan,

Lee JeHun,

Ahn Byung,

Park Sei Yong,

Park JunHyun,

Kim Joo Han,

Park Jaewoo

Publication year - 2010

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3499961

Subject(s) - perspective (graphical) , thin film transistor , acceptor , materials science , stability (learning theory) , optoelectronics , condensed matter physics , physics , nanotechnology , mathematics , computer science , geometry , layer (electronics) , machine learning

The extraction of acceptor‐like subgap DOS (g A (E)) in a‐InGaZnO and a‐InHfZnO TFTs is demonstrated by using multi‐frequency C‐ V technique. The DC performance and negative bias stress (NBS)‐ induced instability are compared in perspective of g A (E). The superior stability of a‐InHfZnO TFT is deduced to be originated from donor‐like DOS g D (E).

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