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P‐204L: Late‐News Poster : Subgap Density of States‐Based Amorphous Oxide Thin Film Transistor Simulator (DAOTS) for Process Optimization and Circuit Design
Author(s) -
Jeon Yong Woo,
Kim Sungchul,
Lee Sangwon,
Kim Dong Myong,
Kim Dae Hwan,
Kim Sun Il,
Kim Sang Wook,
Park Jae Chul,
Chung UIn,
Kim ChangJung,
Lee JeHun,
Ahn Byung,
Park Sei Yong,
Park JunHyun,
Kim Joo Han,
Park Jaewoo
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499960
Subject(s) - thin film transistor , amorphous solid , consistency (knowledge bases) , oxide thin film transistor , oxide , materials science , transistor , simulation , process (computing) , computer science , optoelectronics , electrical engineering , engineering , nanotechnology , chemistry , artificial intelligence , crystallography , layer (electronics) , metallurgy , operating system , voltage
As the oxide TFT‐oriented simulator, the subgap density of states‐ based amorphous oxide TFT simulator (DAOTS) is proposed, implemented, and demonstrated for a‐InGaZnO TFTs. It consists of the parameters having their physical meanings. Moreover, concrete techniques for parameter extraction are supplied. Most preferably, the quantitative self‐consistency with experimental data is guaranteed in DAOTS.