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P‐203L: Late‐News Poster : Analysis on AC Stress‐Induced Degradation Mechanism of Amorphous Indium‐Gallium‐Zinc‐Oxide Thin Film Transistor Inverters
Author(s) -
Kim Sungchul,
Jeon Yong Woo,
Lee Sangwon,
Kim Dong Myong,
Kim Dae Hwan,
Kim Sang Wook,
Kim Sun Il,
Park Jaechul,
Chung UIn,
Kim ChangJung
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499959
Subject(s) - thin film transistor , degradation (telecommunications) , materials science , stress (linguistics) , amorphous solid , inverter , optoelectronics , transistor , trapping , zinc , voltage , electrical engineering , layer (electronics) , chemistry , composite material , metallurgy , crystallography , engineering , biology , ecology , linguistics , philosophy
The degradation mechanism of a‐IGZO TFT‐based inverter is investigated under the toggled AC biased input (V IN ), with a direct evidence of subgap density of states (DOS). The AC stress‐induced threshold voltage shift (ΔV T ) of driver TFT is observed to be smaller than that of load TFT, which results in the V OH degradation during AC stress. The dominant mechanism of the toggled V IN stress‐induced ΔV T of driver TFT in a‐IGZO inverter is the increase of subgap DOS deep stats, whereas the ΔV T of load TFT during inverter operation is attributed to the electron trapping into the interface and/or a‐IGZO thin film.