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P‐202L: Late‐News Poster : Long‐Term Stability of Oxide Semiconductor‐ Based TFTs
Author(s) -
Barquinha Pedro,
Pereira Luis,
Gonçalves Gonçalo,
Martins Rodrigo,
Fortunate Elvira
Publication year - 2010
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3499958
Subject(s) - passivation , materials science , annealing (glass) , partial pressure , semiconductor , optoelectronics , term (time) , oxide , stability (learning theory) , electrical engineering , oxygen , computer science , nanotechnology , metallurgy , chemistry , physics , engineering , layer (electronics) , organic chemistry , quantum mechanics , machine learning
Long‐term electrical stability measurements, including current/bias stress and aging over 18 months of idle shelf life are presented for GIZO‐based TFTs. The effects of oxygen partial pressure, annealing temperature and passivation are discussed. Optimized devices show highly stable properties, such as a recoverable ΔV T <0.5 V after 24h of I D =10 μA stress, quite promising for integration in electronic circuits.